FP200R12N3T7B11BPSA1
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Infineon 1200V PIM IGBT Modules offer TRENCHSTOP™ IGBT7 and EC7 diode technology based on the latest micro-pattern trenches technology. This technology provides strongly reduced losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V PIM IGBT Modules.