IMW120R014M1HXKSA1
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Infineon Technologies CoolSiC™ 1200V SiC Trench MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device performance, robustness, and ease of use. The CoolSiC 1200V SiC Trench MOSFETs are built on a state-of-the-art trench semiconductor process, optimized to deliver both the lowest losses in the application and the highest reliability in operation. Suitable for high temperature and harsh environment operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency.
The CoolSiC™ 1200V SiC Trench MOSFETs are offered in compact TO-247-3 and TO-247-4 packages. The TO-247-4 package contains an additional connection to the source (Kelvin connection) that is used as a reference potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result is even lower switching losses than for the TO-247-3 version, especially at higher currents and higher switching frequencies.