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NXP Semiconductors

MRFX1K80HR5

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SKU: MRFX1K80HR5
$0.00

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NXP Semiconductors MRFX Series 65V LDMOS Transistors offer high RF output power, superior ruggedness, and thermal performance. These transistors feature high power density, lower current losses, high efficiency, easier matching to 50Ω, wide safety margin, and negligible magnetic radiation. The higher power density, low current, and high safety margin enable highly reliable and more integrated industry 4.0 systems with better energy management.

The NXP Semiconductors MRFX LDMOS transistors can manage current levels, which results in reduced stress on DC supplies and improved system efficiency. These LDMOS transistors are also pin-to-pin compatible with the previous generation of NXP LDMOS transistors, making it possible for RF designers to reuse existing printed circuit board (PCB) designs for a shorter time to market. Typical applications include laser generation, plasma etching, particle accelerators, diathermy, and Magnetic Resonance Imaging (MRI).

The MRFX Series consists of four transistors and is available in 7 different versions. The MRFX1K80H and MRFX1K80N transistors are designed to deliver 1800W @ 65V CW (Continuous Wave) and can handle 65:1 Voltage Standing Wave Ratio (VSWR). The MRFX600H transistor is available in a NI-780 air cavity ceramic package with a low thermal resistance of 0.15ºC/W. The MRFX035H transistor is housed in a NI-360 air cavity ceramic package with a thermal resistance of 1.3ºC/W.