Home » RF2L16180CB4
STMicroelectronics

RF2L16180CB4

In stock
SKU: RF2L16180CB4
$0.00

Use this text to encourage communication or promote sharing on social networks.

You can also add links

STMicroelectronics RFxL RF Power LDMOS Transistors offer high-performance intended for multiple applications with different frequency bands. The RFxL RF Power Transistors are available in B4E, B2, and LBB packages.

The RF5L08350CB4 is a 400W 50V high-performance, internally matched LDMOS FET designed for multiple applications over the frequency band 0.4 to 1GHz.

The RF3L05250CB4 is a 250W 28/32V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1GHz. The RF3L05250CB4 pin connection is used in class AB/B and C for all typical modulation formats.

The RF2L16180CB4 is 180W, 28V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600MHz. Four leads can be configured as single-ended, 180-degree push-pull or 90-degree hybrid, or Doherty with proper external matching network.

The RF2L36075CF2 is a 75W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6GHz. The RF2L36075CF2 can be used in class AB, B, or C for all typical cellular base station modulation formats.