SISA12BDN-T1-GE3
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Vishay / Siliconix TrenchFET® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.
The TrenchFET MOSFETs are available in a broad range of power MOSFETs in a wide selection of advanced packages such as -200V to 800V breakdown voltages and 1.2V wide range of gate drive voltages. These MOSFETs are optimized with the lowest Rds(on) for load switch applications and the lowest gate charge and capacitances for fast switching. The MOSFETs are differentiated with low voltage and medium voltage TrenchFETs.
The Low Voltage TrenchFET feature high efficiency, increased power density, and come with space-saving packages. These are ideal for consumer electronics, drones, computers, and telecom equipment.
The Medium Voltage TrenchFET feature compact and highly efficient devices that enable layout optimization, reduce component count, and enable the highest efficiency. These are ideal for power supplies, motor drive control, and renewable energy.